Cryogenic Mechanical Loss of SiO2 film Fabricated by Plasma Enhanced Chemical Vapor Deposition Method

Document #:

LIGO-G1700300-v1

Document type:

G - Presentations (eg Graphics)

Abstract:

Chemical vapor deposition (CVD) is a common method in semiconductor IC industry to fabricate thin films. Large area deposition, close to the size of mirrors for laser interference gravitational waves detector, on silicon wafer with diameter up to 12” is a common practice and 18” is in the state of the art. Many thin film materials for optical purpose can be deposited by using CVD. We have been exploring the possibility of using CVD for the GW detector mirror coatings. Mechanical loss of these materials are of prime interest. Here we report cryogenic mechanical loss of SiO2 films fabricated by using plasma enhanced CVD (PECVD). Comparison to the SiO2 films fabricated by others means, e.g. ion beams sputter, is also given.

Files in Document:

• 20170308 Cryogenic Mechanical Loss of SiO2 film Depos...pdf (518.2 kB)

Topics:

• Meeting

Authors:

• Ling-Chi Kuo
• Huang-wei Pan
• Shiuh Chao